Abstract
Abstract Ar ion sputtering is one of the most accepted techniques for depth profiling in practical X-ray photoelectron spectroscopy (XPS) analysis, while this technique is known to be inadequate for quantitative analysis of glass including mobile ions such as soda-lime-silica glass. For the precise depth profiling on XPS depth analysis, three methods, (i) coating of conductive thin film on glass surface, (ii) sample cooling at the temperature of −130 °C and (iii) buckminsterfullerene (C 60 ) ion sputtering, were investigated to suppress the migration of mobile ions in glass. In our best knowledge, it is the first time to succeed the precise XPS depth analysis of soda-lime-silica glass (70.4SiO 2 , 0.9Al 2 O 3 , 7.3MgO, 7.8CaO, 13.6Na 2 O in mol%) without compositional change by using C 60 ion sputtering. The precise analysis revealed that the ion implantation during Ar ion sputtering principally resulted in the compositional change due to the migration of mobile ions.
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