Abstract
Araon Auger emission excited by 3–16 keV Ar + ion bombardment of Mg, Al, Si, GaP and Ti targets is studied as a function of the ion energy and compared to 2 keV electron-excited Auger emission. Contrary to first series transition metals where collisions such as Ar → Ti are effective for argon excitation, only the rare collisions Ar → Ar (precedently implanted Ar atoms) remain in Mg and Al targets. To this process, another must be added to explain the relatively high argon Auger emission from Si and GaP targets at lower ion energies: collisions of excited energetic recoil Si or P atoms against pre-implanted Ar atoms seem to become effective too. Application of argon Auger emission to quantitative analysis of implanted argon in any target is considered.
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