Abstract
Aqueous base developable, chemically amplified negative resists, based on epoxy chemistry are introduced and evaluated for high resolution, high speed e-beam lithography. These resists are formulated using partially hydrogenated poly(hydroxy styrene) and epoxy novolac polymers and they do not suffer from thermal instability of unexposed regions during processing. Degree of hydrogenation controls the aqueous base solubility and micro phase separation phenomena. Reduction of edge roughness compared to the pure epoxy systems is observed whereas the absence of swelling phenomena allows lithography up to 100 nm regime.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
