Approximate Analytical Description of the E(k)‐Dependence of the Bands of Heavy and Light Holes in Si and Ge

Abstract

AbstractExplicit analytical expressions of the E(k)‐dependence of the valence band of Ge and Si are derived. These expressions describe approximately the nonparabolicity of the bands of heavy and light holes which is caused by the interaction of these bands with the split‐off band. The approximate band structure is compared with the E(k)‐dependence of Kane's three‐band‐model of the valence band following from the (K. p.)‐perturbation theory.