Abstract
X‐ray methods are presented which, besides offering a topographic survey of the defect structure in electronic materials, give quantitative information on the induced strain distribution. Complete strain tensor analyses are obtained by the back‐reflection divergent beam method and by the method of computer‐aided rocking curve analysis (CARCA). The latter is based on the double‐crystal diffractometer principle. An example of the strain analysis by CARCA is given showing the strain dependence on the thickness variation of an InGaAsP film grown on a substrate of InP. Valuable information on the density of interface dislocation is obtained by combining these methods with lattice curvature measurements using scanning topography with automatic Bragg angle control. The elucidation of the strain distribution in depth becomes enhanced by application of x radiation of various wavelengths.
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