Abstract

A dynamical model for the general case of Bragg x-ray diffraction from arbitrarily thick nonuniform crystalline films is presented. The model incorporates depth-dependent strain and a spherically symmetric Gaussian distribution of randomly displaced atoms and can be applied to the rocking curve analysis of ion-damaged single crystals and strained layer superlattices. The analysis of x-ray rocking curves using this model provides detailed strain and damage depth distributions for ion-implanted or MeV-ion-bombarded crystals and layer thickness, and lattice strain distributions for epitaxial layers and superlattices. The computation time using the dynamical model is comparable to that using a kinematical model. We also present detailed strain and damage depth distributions in MeV-ion-bombarded GaAs(100) crystals. The perpendicular strain at the sample surface, measured as a function of ion-beam dose (D), nuclear stopping power (Sn), and electronic stopping power (Se) is shown to vary according to (1−kSe)DSn and saturate at high doses.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call