Application of the interface capacitance model to thin-film relaxors and ferroelectrics

Abstract

The interface capacitance model is briefly revised. It is emphasized that this is a device model related to the boundary condition for polarization and unable to explain the thickness evolution of the ferroelectric properties. The model can be applied to extract the properties of the film from those measured in the capacitor. The interface parameters are found to be temperature independent. The coupling of the film with the interface and the electrode is shown to result in the measured frequency dependent permittivity totally different from that of the film.