Abstract
Ferroelectric thin films with different compositions from PZT 50 50 to PbTiO 3 were prepared by a modified sol-gel process and deposited by spin-coating on Pt/Ti/SiO 2/Si(100)wafer. The ferroelectric and dielectric properties of the thin films dependent on thin film composition are presented and compared with bulk ceramic properties. The results correlated with the crystal structure and ferroelectric domain microstucture of PZT crystallites determined by X-ray diffraction. The influence of the sol-gel film process on the ferroelectric properties, the crystallite texture, structure and domain microstructure is discussed.
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