Abstract
A display that makes use of an electronic switch at each picture element (pixel) to control the display media is an “active matrix display”. Examples of switches are thin film field-effect transistors (TFTs) and metal-insulator-metal (MIM) non-linear thin film devices. MIMs have sufficiently high stability and controllability of characteristics, together with simpler fabrication processes than TFTs. The degree of non-linearity is optimized by critically controlling the process parameters of oxide formation. I–V characteristics of anodically formed tantalum oxide films are of the Poole-Frenkel type in the high-field region. This has been confirmed by temperature and thickness dependence of conductivity. The field-dependent conductivity, established by studies of current variation with temperature, indicates a barrier of about 1.44 eV. The value of the non-linearity coefficient (β), as obtained from the slope of the log (I/V) vs. V 1 2 plot, ranges between 2 and 4 which seems to be adequate to activate liquid crystal pixels.
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