A monolithically integrated micro-LED display based on GaN-on-silicon substrate

Abstract

A monolithic micro-LED display technology is proposed using a gallium-nitride-on-silicon substrate. An active matrix (AM) display was realized by interconnecting nitride-based LEDs as display pixels with Si thin-film transistors (TFTs) as driving circuitries. MOS TFTs were fabricated on a Si surface which had been exposed after dry etching of the LED epitaxial layer. The mobility and sub-threshold slope were measured as 354.3 cm2 V−1 s−1 and 0.64 V dec−1, respectively. A 150 pixel-per-inch 0.6 inch monolithic display was demonstrated with a 60 × 60 pixel array AM display by an integration technology on the same substrate.