Abstract
We report on combination of crystal growth of bulk SiGe and thin film crystals on SiGe bulk substrates to prepare heterostructures with controlled stain in constituent materials. Muticomponent zone melting method to permit crystal growth with uniform composition and Czochralski growth were employed as growth techniques for SiGe bulk crystals. On homemade SiGe bulk substrates, we realized strained Si thin film as well as luminescent strained quantum wells with improved structural perfection compared with those on relaxed SiGe on commercially available Si.
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