Abstract
Novel efforts have been made to analyze the electrical properties of ferroelectric devices by utilizing scanning probe microscopy (SPM). In this study, an attempt was made to measure the hysteresis loop of submicron ferroelectric capacitors using SPM as a probe tip. Conductivity mapping images were useful for understanding the inferior process. Additionally, the surface potential measurements using the Kelvin force microscopy (KFM) mode were made for various ferroelectric films. The polarizability of Pb(Zr,Ti)O3(PZT) film can be evaluated by measuring the surface potential, and seems to be a promising aspect particularly for analyzing various ferroelectric films including hydrogen-damaged films.
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