Abstract
The application of the reverse current I r of an implantation damaged diode for low-dose ion implantation monitoring is presented. A linear dose dependence of reverse current was found for 1H + 200 keV, 4He + 200 keV, 11B + 40 keV, and 28Si + implants within the dose range 5 × 10 9−1 × 10 12 cm −2. The temperature and time stability of the current I r and the influence of implantation conditions on its magnitude were studied experimentally and analysed by means of numerical simulations. The results showed that I r may change considerably with time and temperature mainly due to the dissociation of unstable VP pairs. It was shown that the method may be useful for very low-dose uniformity mapping of ultra-deep implants.
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