Abstract
The formation of a buried dielectric in single crystals of silicon by high dose implantation of oxygen ions is investigated. The dependence of the microstructure on implantation conditions is determined. It will be shown that the microstructure can be tailored by changing the implant conditions to optimize its suitability for the silicon-on-insulator technology. Mechanisms responsible for the formation of the microstructure and the influence of implantation conditions will be discussed.
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