Abstract
Auger electron spectroscopy in combination with depth profiling by Ar ion sputtering was employed as a surface analytical technique to determine the positions of thin (3–5 nm) inert Pd markers during growth of oxide films on Al, Ni, and β-NiAl. Alumina films 35 and 120 nm thick formed on Al and β-NiAl, respectively, grew by inward diffusion of oxygen. Metal migration accounted predominantly for the growth of a NiO film 150 nm thick on the (111) crystal face of Ni. However, an assessment could not be made with respect to oxygen diffusion, if any, in this film due to the limitations imposed on precise depth profiling of the marker position caused by uneven sputtering of the oxide and metal phases.
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