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Abstract
AbstractBoth Auger electron spectroscopy (AES) and time‐of‐flight secondary ion mass spectroscopy (TOF‐SIMS) were applied to study a three‐layer backside metallization stack that was thermally treated up to temperatures above the normal process temperature. In addition to conventional sputter depth profiling, we applied a more sophisticated sample preparation method—in situ low angle cross sectioning. This way the depth scale was enlarged approximately by a factor of 20, and therefore transferred to lateral dimensions. This allows a more detailed AES analysis of the metallization system using mappings of elemental distributions. The TOF‐SIMS depth profiles were recorded as a function of the lateral geometric coordinates and in depth as a function of the sputter ion dose. This way it was possible to analyse the three‐dimensional sample composition. Copyright © 2006 John Wiley & Sons, Ltd.
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