Abstract
The application of plasma doping in three-dimensional (3-D) metal oxide semiconductor (MOS) transistors is proposed. One of the key steps in for fabricating 3-D MOS transistors with high-aspect-ratio channels is 3-D doping. Thus, plasma doping is analyzed and its profile is evaluated. Since conventional evaluation methods are not very effective for impurity concentration profiling along the sidewall of a vertical structure, a new method utilizing impurity-enhanced oxidation is proposed. By this method, an arsenic-doped layer of approximately 1×1020 cm-3 in concentration has been formed uniformly for a beam of 1 µm height and 0.2-1 µm width.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
