Abstract
Abstract The dependencies of the logarithm of the film resistance and the activation energy of the film resistance on the coverage coefficient are calculated for discontinuous Cu films on glass substrates with coverage coefficients q varying between 0 and 1. The calculations are carried out using a computer program which includes such conduction mechanisms as substrate conduction, metal conduction, tunnelling and thermally activated tunnelling. The computer film structure is equivalent to a real structure determined by microscopic examinations. The calculated dependence of the logarithm of the film resistance and the activation energy of the film resistance are compared with experimental values obtained for discontinuous Cu films. The qualitative agreement between the calculated results and experimental data is found to be good.
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