Abstract
The temperature dependence of resistance and activation energy in the range from 20 to 150°C are calculated for discontinuous Al films of coverage coefficients varying between 0 and 1. The calculations are carried out using a computer model which includes such conduction mechanisms as substrate conduction, metal conduction and tunneling. It has been found that when the coverage coefficient q s increases, activation energy decreases from the value characteristic for the activation energy of the substrate ( q s = 0) to the value of zero in the vicinity of the percolation threshold. The calculated temperature-dependence of resistance and activation energy are compared with experimental values obtained for discontinuous Al films. The qualitative agreement between the calculated results and experimental data is found to be good.
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