Application du pompage de charge à trois niveaux aux transistors MOS submicroniques

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We have used a three-level charge pumping technique on submicronic MOS transistors. The energy distribution of capture cross sections of electron Si/SiO 2 interface states has been determined, showing a great variation of this values with energy. Taking into account this dependency, a very simple method to calculate the energy distribution of interface states density on an energy scale in the silicon bandgap including the midgap is proposed. The results are compared with values obtained with the two-level standard charge pumping technique