Abstract
A novel charge pumping technique is proposed for measuring the spatial distribution of interface state density N/sub it/ in MOSFETs. Instead of connecting the source and the drain together as is usually done, different reverse bias voltages are applied to the source and the drain separately. The method makes it possible to measure the distribution of N/sub it/ without making any assumptions about it. With this method, one can determine N/sub it/ distribution near the source and the drain of the channel independently. Results show that the interface state distribution of a virgin MOSFET is not constant along the channel. >
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