Abstract
β-Ga2O3, a wide bandgap oxide material, has attracted recently scientific attention in optoelectronics, especially electroluminescent (EL) devices. It is good as a host material for transition metals and rare-earth elements. Herein, a NIR emitting alternating current (AC)-driven powder-based electroluminescent (PEL) device is introduced with superior thermal stability from a β-Ga2O3:Cr3+ phosphor. It consists of β-Ga2O3:Cr3+ and BaTiO3 layers that serve as active and insulating layers, respectively, which are fabricated by a facile and cost-effective screen-printing method on the ITO glass substrate. Under the AC source, it emits the NIR spectrum, which is optically attributed from the spin-allowed and spin-forbidden transitions of Cr3+ ions and well overlapped with the phytochrome absorption spectrum. The strategies to obtain the optimum condition of the phosphor for EL purposes are presented with parameters of annealing temperatures as well as Cr3+ concentrations. Further analysis shows a promising application in harsh environments with thermal stability, so-called, anti-thermal quenching phenomenon up to 200 °C (473 K). This work can provide a worthwhile realization and method of large-area NIR emitting devices based on the β-Ga2O3 phosphor.
Published Version
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