Abstract
We have investigated anomalous RF sputtering in a high magnetic field, and the effects of high magnetic fields on the microstructures and magnetic properties of FeSiO films. Using a specially designed sputtering apparatus whose chamber can be set in a 6 T liquid helium-free superconducting magnet, FeSiO films were successfully deposited in Ar+O 2 mixture. Three typical sample appearances, hole-at-center, phase-separation and hybridization were obtained for the FeSiO films prepared in the low oxygen–argon flow ratio (<1.0%), low magnetic field (<1.0 T) regime, indicating that the distribution of plasma is strongly influenced by a magnetic field, resulting in an inhomogeneous spatial distribution of sputtered atoms. In the high oxygen–argon flow ratio (>2.0%), high magnetic field (>2.0 T) regime, strong (110) orientation of Fe 3O 4 grains and larger remanence and coercivity measured in the direction normal to the film plane appeared in the FeSiO films, indicating that the high magnetic fields not only orient the FeSiO film but also induce remarkable perpendicular magnetic anisotropy during the deposition.
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