Abstract
An Al0.3Ga0.7As/In0.15Ga0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6 mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.
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