Anomalous increase in hot-carrier-induced threshold voltage shift in n-type drain extended metal-oxide-semiconductor transistors

Abstract

Anomalous increase in positive threshold voltage shift (ΔVT) in n-type drain extended metal-oxide-semiconductor (DEMOS) transistors stressed under high drain voltage and gate voltage is observed. Charge pumping data and technology computer-aided-design simulations reveal that hot-electron injection and trapping in the gate oxide above channel region is responsible for ΔVT. Enhanced impact ionization rate resulted from the presence of large amount of negative oxide charge in channel region is identified to be the main mechanism for anomalous increase in ΔVT. From the results presented in this letter, hot-carrier-induced anomalous increase in ΔVT can become a serious reliability concern in DEMOS transistors.