Abstract
Abstract Spin-orbit interaction (SOI) can be introduced by the proximity effect to modulate the electronic properties of graphene-based heterostructures. In this work, we stacked trilayer WSe2 on Bernal tetralayer graphene to investigate the influence of SOI on anomalous Hall effect (AHE). In this structurally asymmetric device, by comparing the magnitude of AHE at positive and negative displacement fields, we find that AHE is strongly enhanced by bringing electrons in proximity to the WSe2 layer. Meanwhile, the enhanced AHE signal persists up to 80 K, providing important routes for topological device applications at high temperatures.
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