Abstract
The effect of the electric field on the thermal emission rate of electrons from the hydrogen-carbon deep donor level in Si has been investigated by means of double-correlation deep-level transient spectroscopy. The results show for the first time an anomalous strong dependence of the activation energy of a deep level on the electric field to the extent of \ensuremath{\cong} 31 meV/${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1}$. A tentative model is considered which takes into account that the electronic properties of hydrogen depend on its lattice site in the crystal, as predicted by theory. The zero-field activation energy for electrons of the H-C complex was found to be 185 meV.
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