Abstract
Intrinsic germanium specimens with different thicknesses were quenched from temperatures between 700°C and 900°C into ethylene glycol kept at room temperature. Two normal annealing stages, Stage I (≃150°C) and Stage III (≃500°C), and a reverse annealing stage, Stage II (≃300°C) were observed from electrical resistivity measurements at 25°C or at 78 K. Stage I might possibly be attributable to the migration of divacancies with an activation energy of about 0.9 eV to vacancy-clusters formed during quenching. Stage II may result from the migration of donor-type defects with an activation energy of about 1.3 eV. At Stage III, the apparent migration energy increases as the specimen thickness becomes larger. This trend can be accounted for by the dissociation of vacancy-clusters formed during quenching.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
