Annealing of ion implanted 4H–SiC in the temperature range of 100–800°C analysed by ion beam techniques

M Usman,M Nour,A.Yu Azarov,A Hallén

doi:10.1016/j.nimb.2010.02.020

Annealing of ion implanted 4H–SiC in the temperature range of 100–800°C analysed by ion beam techniques

M Usman, M Nour + Show 2 more

https://doi.org/10.1016/j.nimb.2010.02.020

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Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms	Publication Date: Feb 25, 2010
Citations: 14

Affiliation: KTH Royal Institute of Technology

#Ion Beam Techniques #Subsequent Annealing + Show 8 more

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Abstract

Ion implantation induced damage formation and subsequent annealing in 4H-SiC in the temperature range of 100-800 degrees C has been investigated. Silicon Carbide was implanted at room temperature w ...

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