Abstract
β-type SiC layers were fabricated by high dose implantation of carbon ions into silicon with subsequent annealing. The effect of implanting energetic Si or P ions following the carbon ion implantation on the ß-SiC formation behaviour was studied by means of infrared absorption spectroscopy. The results were compared with those obtained by implantation of Ar or Ne noble gas ions which caused a reduction in the ß-SiC formation temperature. The electrical properties of the ß-SiC layers formed by this ion beam technique were also evaluated.
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