Annealing of defects at high temperature irradiation of silicon by accelerated ions

Abstract

Abstract Angular and temperature dependences of ion-electron emission coefficient γ at bombardment of the 〈111〉 face of Si monocrystal by Ar+ ions with the energy of 70 keV and by Kr+ ions with the energy of 30 keV were studied. Two “annealing stages” of radiation defects were observed under irradiation: at T° of 400°C order. When annealing of the near-surface amorphized layer takes place under irradiation and at temperatures above 600°C (T = 0.52 of the melting temperature). It is shown that in contrast to the first stage of defects annealing, the second “stage” does not cause changes of γ = γ(ϕ) angular dependences types (ϕ is the angle of ion beam incidence onto a crystal surface) and leads only to a decrease of γ value. This phenomenon is connected with the processes of considerable density formation of high temperature structure defects resulting in electrons capture. The significance of crystal surface is underlined in formation of these capture centres, as well, as considerable analogy with Ge crys...