Influence of C60 Ion Beam Angle of Incidence Upon XPS Depth Profiling for Polymers

Abstract

We have previously reported that low-degradation XPS depth profiling of a polymer was effectively observed using C60 ion beam sputtering. However, the suitable sputtering condition for C60 ion beam has not been studied in detail yet. In this paper, we would like to discuss the influence of C60 ion beam angle of incidence upon XPS depth profiling for organic polymers. The results obtained are: (1) Relative sputtering yield for SiO2 was increased with the angle of incidence, (2) Carbon residue in the sputtered Si substrate is decreased with the higher angle of incidence (3) Degradation of atomic concentration (C and O concentration) and chemical states for both carbon and oxygen in polyethylene-terephthalate remained relatively intact by using a grazing angle of 75 degree. In conclusion, the higher angle of incidence seems to be better for the XPS depth profiling using C60 ion beam.