Abstract
The thermal stability of He3 implanted into single crystal indium phosphide has been studied as a function of postimplant annealing temperature between 150 and 600 °C and annealing temperature ramp rate in the range 0.1–20 ° C/s. Retention of implanted helium (implant energy 1.0 MeV and fluence 1.0×1016 cm−2) is measured via the He3(d,p)4 nuclear reaction. Helium is shown to be a facile diffuser unless trapped by implantation induced defects. The temperature ramp rate is shown to be a dominant parameter in determining the fraction of implanted helium that becomes trapped in voids.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call