Anneal temperature dependent Er 3+/Tm 3+ energy transfer and luminescence from Er and Tm co-doped silicon-rich silicon oxide

Abstract

The effect of the anneal temperature on the Er 3+/Tm 3+ energy transfer and subsequent Er 3+/Tm 3+ luminescence from Er/Tm co-doped, silicon-rich silicon oxide films are investigated. The anneal procedure necessary for optimum photoluminescence (PL) from the co-doped film is substantially different from that for only Er- or Tm-doped films. Analysis and modeling of PL intensity and time-resolved PL indicate that this higher optimum anneal temperature is due to the anneal temperature dependent Er–Tm interactions. In addition, the optimization of combined ultrabroad Er/Tm luminescence was discussed controlling Er–Tm interactions which is tailored by the change of Er/Tm doping ratio and anneal temperature.