Abstract
We performed time-resolved reflectivity measurements in p-type heavily doped Si under non-resonant excitation. A large contribution from anisotropic state-filling is observed, indicating that the lowered Fermi energy due to the p-type heavy doping enhances the anisotropy in the hole distribution. The initial phase shift of coherent phonons induced by p-type doping is attributed to the anisotropic hole distribution.
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