Abstract
AbstractAngular-resolved ESCA was used to study single cadmium arachidate monolayers transferred to Si (100) wafers by the Langmuir-Blodgett technique. We find the monolayers to be of high integrity with respect to those defects which enhance the escape probability of substrate photoelectrons through the overlayer. The inelastic mean-free pathlengths of Si (2p) and C (1s) electrons were calculated to be 49±6 Å and 45±6 Å for the kinetic energies of 1388 eV and 1202 eV, respectively. The overall ordering of the hydrocarbon chains is less than for alkane thiols assembled on noble metals. We find that the precision of the Tyler algorithm to deconvolute angular-resolved ESCA data into depth profiles is accurate within 10% for predicting the thickness of the hydrocarbon overlayer but less precise for intermediate layers.
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