Abstract
A fuzzy framework based on an adaptive network fuzzy inference system (ANFIS) is proposed to evaluate the relative degradation of the basic subthreshold parameters due to hot-carrier effects for nanoscale thin-film double-gate (DG) MOSFETs. The effect of the channel length and thickness on the resulting degradation is addressed, and 2-D numerical simulations are used for the elaboration of the training database. Several membership function shapes are developed, and the best one in terms of accuracy is selected. The predicted results agree well with the 2-D numerical simulations and can be efficiently used to investigate the impact of the interface fixed charges and quantum confinement on nanoscale DG MOSFET subthreshold behavior. Therefore, the proposed ANFIS-based approach offers a simple and accurate technique to study nanoscale devices, including the hot-carrier and quantum effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
