Abstract
AbstractTheoretical investigation are made of the temperature induced metal–insulator transition in doped ferromagnetic semiconductors described by the s–d(f) exchange model. The transition is the result of the mobility edge movement, the disorder being due to interaction of electrons with the magnetic‐ion spin density fluctuations. The electrons are described in effective mass approximation. The mobility edge is obtained from the simple criterion due to Ioffe‐Regel.
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