Abstract
A correct and improved analytical subthreshold surface potential model for pocket n-MOSFETs is proposed. The model is based on solutions of the quasi-two-dimensional (quasi-2-D) Poisson's equation, which satisfy rigorously the boundary conditions of continuity of potential and electric field in the lateral direction along the surface of pocket devices. The closed-form model equations without any fitting empirical formulas efficiently and correctly generate surface potential profiles between the source and drain of deep-submicrometer as well as long-channel pocket n-MOSFETs. Drain-induced barrier lowering (DIBL) effect of deep-submicrometer pocket n-MOSFETs is also predicted by the potential model. The subthreshold surface potential model is applied to off-state current and threshold voltage of deep-submicrometer or sub-100-nm pocket n-MOSFETs.
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