Analytical modelling to study the magnetic field-assisted growth of graphene in the reactive plasma

Abstract

A theoretical model has been developed to study the impact of a magnetic field on the growth of vertically aligned graphene sheets using plasma deposition techniques. The present model incorporates the dynamics of negatively charged electrons and positively charged ions and active neutral radicals of reactive gases in the complex plasma comprising Ar, C2H2, and H2 gases and deposition of these gaseous phase plasma species in the form of vertically aligned graphene sheets. The dynamics and deposition of the plasma particles can be controlled or enhanced by various process parameters and use of external magnetic field is one of the most promising way to enhance the deposition of species. In the present work, the growth of vertical graphene in a plasma environment has been studied with and without external magnetic field. The analytical simulations of the developed model revealed the significant enhancement in the growth of vertically aligned graphene sheets when magnetic field is applied in the plasma reactor. Our findings of the analytical simulations are in line with existing experimental observations.