Abstract
Here, the authors propose an analytical model to evaluate the performance of an advanced trigate MOSFET structure called trapezoidal trigate MOSFET on silicon-on-nothing (TTMSON). The model is based on the solution of Poisson's partial differential equation in three dimensions. The expression for potential distribution has been used to model other device parameters like electric field distribution, quantum inversion charge, and threshold voltage. The TTMSON device immunity to various short channel effects (SCEs), such as drain-induced barrier lowering (DIBL) and sub-threshold swing, has been examined. A detailed analysis of the gate and channel engineering techniques like dual material gate, graded channel, and dual material gate with graded channel has also been carried out to choose the best device structural configuration for enhancing the device performance and mitigating SCEs in nano-regime. In addition, the effect of inclination angle on different performance parameters has been considered. The proposed analytical model of TTMSON has been verified by comparing the model results with the simulation results using the numerical device simulator ATLAS.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
