Abstract
In this paper, we present a simple 2- dimensional analytical model for exploring the novel features of the dual material gate (DMG) high electron mobility transistor (HEMT) for reduced short channel effects (SCE). The model accurately predicts the channel potential and electric field for single material gate (SMG) and DMG structures. It is seen that the work function difference of the two metal gates leads to a screening effect of the drain potential variation, by the gate near the drain resulting in suppressed drain induced barrier lowering (DIBL) and hot carrier effect. Moreover, carrier transport efficiency improves due to a more uniform electric field along the channel. The model takes into account the effects of the lengths of the two metal gates and their work function difference. The results predicted by the model are compared with those obtained using ATLAS device simulator to verify the accuracy of the proposed model.
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