Analytical Modeling of ZrO2, HfO2 and SiO2 Effect over Tunneling Field Effect Transistor

Abstract

These days, tunneling field effect transistors (TFET) for their ability in decrease of off-current transistors and also for electronic device power consumption, it is best point out for a scientist to research on this kind of transistors. By reducing off-current, on-current decreases too in compare to MOSFET transistors. Researchers are trying to reduce-off-current so that a minimum decrease in on-current occurs. One of the methods is to select a suitable oxide for the gate electrode. This paper presents an analytical model for the potential distribution of ZrO2, HfO2 and SiO2 effect over TFET. Using the potential distribution, the tunneling drain current is derived analytically by integrating the band-to-band tunneling generation rate over the device volume. The all-clear proposed that analytical models are validated via numerical results obtained from device simulations in SILVACO ATLAS software based on a non-local band-to-band tunneling model. Then results were ompared together. The results show the optimized on-current against off-current ratio and subthreshold swing.