Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

Meisam Rahmani,Razali Ismail,Elnaz Akbari,Mohammad Taghi Ahmadi,Hediyeh Karimi Feiz Abadi,Mehdi Saeidmanesh

doi:10.1186/1556-276x-8-55

Abstract

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current–voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current–voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

Highlights

Graphene, as a single layer of carbon atoms with hexagonal symmetry and different types such as monolayer, bilayer, trilayer, and multilayers, has attracted new research attention
Two well-known forms of Trilayer graphene nanoribbon (TGN) with different stacking manners are understood as a>]. Bernal stacking (ABA) (Bernal) and ABC [11]
The band structure of ABA-stacked TGNs can be assumed as a hybrid of monolayer and bilayer graphene band structures

Summary

Introduction

As a single layer of carbon atoms with hexagonal symmetry and different types such as monolayer, bilayer, trilayer, and multilayers, has attracted new research attention. The quantum confinement effect will be assumed in two directions. Two well-known forms of TGN with different stacking manners are understood as ABA (Bernal) and ABC (rhombohedral) [11]. AB (Bernal) stacking is the distinct stacking structure for bilayers. It can be formed as either ABA, as shown, or ABC (rhombohedral) stacking [1,12]. Bernal stacking (ABA) is a common hexagonal structure which has been found in graphite. The band structure of ABA-stacked TGNs can be assumed as a hybrid of monolayer and bilayer graphene band structures.

Methods

Results

Conclusion