Abstract
In the framework of Landauer-Datta-Lundstrom generalized transport model we obtained an analytical formula for the subthreshold swing in MOSFET with a source fabricated from a cold metal, where the electrons injected into the FET channel has no longer a “hot” Boltzmann “tail” in their energy distribution. It was demonstrated that for such a case the subthreshold swing becomes lower at ambient conditions than the limit value S = ln 10(kT/e) ≈ 60 mV per decade. This effect can be used for the lowering of the voltage supply and for the further MOSFET scaling.
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