Switching at Less Than 60 mV/Decade with a “Cold” Metal as the Injection Source

Abstract

Power dissipation is a great challenge for the continuous scaling down and performance improvement of CMOS technology, due to thermionic current switching limit of conventional MOSFETs. In this work, we show that this problem can be overcome by using cold metals as the transistor's injection source, which are different from conventional metals and can filter high energy electrons to break the Boltzmann tyranny. It is proved that the subthreshold swing (SS) of thermionic current of transistor using cold metal contact can be extremely smaller than 60 mV/decade at room temperature. Specifically, two-dimensional (2D) transition metal chalcogenide (TMD) cold metals of NbX$_2$ and TaX$_2$(X=S, Se, Te) are proposed as the injection source of FETs. Quantum transport simulations indicate that promising switching efficiency and on-state current can be achieved using TMD cold metal injection source, which is beneficial for energy efficient applications.