Analytical Investigation of Slow Light Systems with Strained Quantum Wells Structure under Applied Magnetic and Electric Fields Based on V-type EIT

Abstract

In this paper, a slow light device, which is composed of GaAs/AlGaAs [110] strained quantum wells, has been studied to realize V-type electromagnetically induced transparency phenomenon. Influences of applying electric and magnetic fields are investigated theoretically on main properties of the slow light devices, such as slow down factor and refractive index, based on Bloch equations approach. This is the first study of applying external magnetic and electric fields impacts on proposed structure by using V-type electromagnetically induced transparency. By changing the external fields, we are able to modify central frequency of presented structure that provides appropriate conditions in order to be utilized in optical storages, optical buffers and all-optical switches. According to the simulation results, the peak value of slow down factor is estimated to near 5000 when power intensity of pump and signal are 10 kW/cm2 and 0.1 kW/cm2, respectively. With optimization the amount of external fields, the central frequency of system can reach positive shift as high as 1.1 THz and negative shift close to -1.1 THz.