Abstract
In this paper, we present a current transport model of MoS2-based dual gate tunnel field effect transistor from both analytical and numerical techniques. In analytical modeling, two-dimensional (2D) model of potential distribution with its corresponding energy level for the hetero-junction has been solved and implemented with Landauer current transport mechanism. The output characteristics have been compared with the quantum mechanical solution obtained from non-equilibrium Green's function (NEGF) formalism. The sub-threshold slope (SS), obtained from analytical and NEGF methods are 10 mV/decade and 12.6 mV/decade with on/off current ratio of 107 and 106, respectively at VDS = 0.5 V. We have considered scattering mechanism into our calculation and have shown that carrier transportation for 20 nm channel length is diffusive. In addition, scattering reduces the on current by an order of magnitude, and resembles good agreement with the atomistic simulation. Lastly, mobility and ionized impurity concentration for our proposed structure have been calculated as 27.2 cm2/Vs and 1.17 × 1013/cm2.
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