Abstract
In this paper, the influence of interface trap charges on the characteristics of asymmetric dielectric modulated dual short gate tunnel field effect transistor (ADMDG-TFET) has been analyzed. The effect of a donor (positive) and acceptor (negative) trap charges with various concentrations on the device d.c characteristics are studied. A comparative analysis has been performed between symmetric silicon dual gate tunnel field effect transistor (DG-TFET) and ADMDG-TFET (both Si and Si0.3Ge0.7) with matching dimensions in the presence/absence of interface trap charges. It is found that a shift in threshold voltage (Vth) and subthreshold swing (SS) degradation are observed due to the presence of interface traps in both devices. However, the ADMDG TFET is more immune to Vth shift and SS degradation by acceptor and donor interface traps compared to silicon DG TFET. Also, the ambipolar current in ADMDG TFET is more suppressed than the silicon DG TFET in the presence of trap charges.
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