Abstract
A semi-classical and a semi-quantum current transport model for p-i-n n-type armchair graphene nanoribbon tunnel field effect transistor (TFET) are studied analytically. The results are compared with the numerical quantum transport simulation method using an atomistic Schrodinger–Poisson solver within the non-equilibrium Green function (NEGF) formalism. The channel length and width are 20 and 4.9 nm and a-GNR band gap is 0.289 eV. Current ratio ${\rm I_{ON}}/{\rm I_{OFF}}$ at 0.1 V supply voltage is calculated as follows: 122, 16.3 and 116 with a subthreshold slopes 26, 69 and 27.4 mV/decade from semi-classical, semi-quantum and NEGF simulation, respectively. Performance of a-GNR TFET is also studied analytically and numerically considering a-GNR width variation. Voltage transfer characteristics of a-GNR TFET inverter are computed for 0.1 V and 0.2 supply voltages using three current transport models which are in close agreement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
